发明名称 MOLECULAR BEAM EPITAXIAL CRYSTAL GROWTH DEVICE
摘要 PURPOSE:To improve efficiency heating of a molecular beam material through a cell by a method wherein the cell comprises an inner pipe and a heater heats the cell from an inside of the inner pipe. CONSTITUTION:A cell 7 is composed of a conic outer pipe 7a and a straight piped inner pipe inserted into the 7a, and is a structure in which a larger hole end (right upper end on the illustration) of the outer pipe 7a is opened, and the inner pipe 7b end in the same side is closed, and a space between a smaller hole end (left lower end in the illustration) of the outer pipe 7a and the inner pipe 7b end in the same side is closed. A heater 8 has a structure, in which a heater line is wound in a spiral adjoining an i-nner periphery of the inner pipe 7b, a winding pitch in a point portion 7ba region of the inner pipe 7b is made smaller than that in a center portion 7bb region, and a temperature T3 of the point portion 7ba is made higher than a temperature T4 of the center portion 7bb in heating. A heater 9 is a structure, in which a heater line is wound in a spiral adjoining the outer periphery of the outer pipe 7a, and a winding pitch in a radiation port portion 7aa region is -made smaller than that in a center portio-n 7ab region in order that the temperature of the radiation port portion 7aa of the outer pipe 7a and the center portion 7ab may almost agree with the temperature T3 and T4 in heating.
申请公布号 JPS61121427(A) 申请公布日期 1986.06.09
申请号 JP19840243815 申请日期 1984.11.19
申请人 FUJITSU LTD 发明人 SHIBATOMI AKIHIRO
分类号 H01L21/20;H01L21/203 主分类号 H01L21/20
代理机构 代理人
主权项
地址