| 摘要 |
PURPOSE:To enable the desired performance of a photoresist to be exhibited even in prebaking or postbaking under high temp. by forming a photoresist layer contg. a light absorber on the material to be etched, and further on it another layer contg. a photodecolorable compd. CONSTITUTION:The photoresist layer contg. a light absorber is formed on the material to be etched, and further on it another layer is formed contg. a photodecolorable compd., preferably, having sensitivity to the light to be used for exposure and a ratio of light absorbance in a nondecolored state to that in a decolored state of >=10, especially represented by formula I. The light absorber has, preferably, a ratio of absorbance in a decolored state to that in a nondecolored state of >=0.9 when the material is exposed to the prescribed light. Azo type dyes, etc., are preferable as the light absorber. |
