| 摘要 |
PURPOSE:To contrive to realize the higher-speed operation and higher-integration of a semiconductor device by a method wherein an electrode layer for emitter electrode lead-out and opening parts are respectively provided in the second insulating film and at sites, where correspond to the active layer in the bipolar transistor circuit. CONSTITUTION:A silicon epitaxial n<+> type layer 3, which is used as the first epitaxial layer, is formed on the upper surface of a first insulating film 2 and a second insulating film 4 is formed in the same manner. Then a silicon epitaxial n-type layer 12, which is used as the second epitaxial layer, and an oxide film 13 are formed on the upper surface of the insulating film 4, and base p<+> type layers 5 and 5a, collector n-type layers 6 and 6a, base electrode layers 7 and 7a and an emitter electrode layer 8, which is an n<+> type layer, are formed. Then, holes for element isolation are bored in the silicon epitaxial n-type layer 12, an insulating film 4 for element isolation is formed from the upper direction of the holes all over, the surface is flattened and windows 15-17, 17a and so forth are opened to perform a treatment in order by an RIE method. Lastly, polycrystalline silicon electrodes or metal electrodes are formed and the semiconductor device is manufactured. As the device is one to be constituted in the structure, wherein each electrode and the emitter electrode are insulat ed, the higher-speed operation and higher-integration thereof can be realized. |
