| 摘要 |
PURPOSE:To obtain a semiconductor element, which has rectifying characteristics and photovoltaic characteristics and is suitable for diodes and solar batteries, by contacting a metal forming a Schottky barrier with a polymer of aniline having electric conductivity of 10<-4>-10<-8>S/cm. CONSTITUTION:An electrode 4 comprising an Au evaporated film is provided on the back surface of a film 1 made of an aniline polymer having electric conductivity of 10<-4>-10<-8>S/cm. The side of the electrode 4 is fixed to a glass substrate 3. Then an insulator 5 is provided on one end part of the surface of the film 1. A Schottky barrier metal 2 comprising Al is deposited on the insulator 5 and the surface of the film 1. A part of the metal 2 on the insulator 5 is used as an electrode terminal 6. The following processes are carried out in order to manufacture the film 1: the substrate 3 having the electrode 4 is immersed in 2N sulfuric acid, in which aniline is dissolved so as to obtain concentration; the electrode 4 is made positive; a Pt electrode, which is arranged at the opposite position, is made negative; +1.2V is applied; and the film 1 is formed on the substrate 3. |
