| 摘要 |
PURPOSE:To obtain a fine resin pattern, by overlying a resist mask on a film having a different etching rate from that of a substrate, etching them to form overhangs, removing the mask, covering the structure with a resin layer, removing the surface to expose the film and removing the exposed film by etching. CONSTITUTION:A resist mask 3 is applied on an SiO2 film 2 on an Si substrate 1. Anisotropic etching and then isotropic etching are carried out for producing a pattern 2A under the mask 3. The etching rate is previously determined while the amount of side etching is controlled with time so as to obtain the pattern with a width of about 0.5mum. The mask 3 is removed and photoresist or non- photosensitive polymeric resin 4 is rotationally applied. The flat surface thus obtained is subjected to the RIE or the like so as to expose the upper face of the pattern 2A, and the film 2A is removed by etching. According to this method, a pattern can be formed by means of a mercury-vapor lamp with high precision equivalent to that obtained by means of electronic beams or X rays. |
