| 摘要 |
PURPOSE:To avoid unnecessary etching out of a source and a drain and to prevent increase in resistance value and wire breakdown, by using an etching mask, which is self-aligned with a connecting hole and covers the connecting hole, and forming a conducting layer. CONSTITUTION:A hole 5 is provided in a thin SiO2 film 3 on a P<-> Si substrate 1, which is insulated and isolated 2. As ions 6 are implanted. The surface is coated by Poly Si 7. An N<+> layer 7A is formed by heat treatment and the diffusion of the As 6. By the heat treatment, the hole 5 is formed on the N<+> layer 7A based on the difference in concentration of As, and an SiO2 mask 8 is also formed on the N<+> layer 7 by self-alignment. P ions are introduced in the poly Si 7, and Mo or MoSi2 is laminated. Thus the part is activated. Patterning is performed, and a gate electrode and a wiring 10 are formed by conducting poly Si 7A-7C and the Mo or MoSi2 9. An N<+> layer 11 is formed by ion implantation and elongated diffusion. In this constitution, unnecessary etching out of source and drain regions can be avoided owing to the presence of the mask 8, and the increase in contact resistance between the conductive layer 10 (layer 7C) and the N<+> layer 11, and wire breakdown can be prevented. |
