| 摘要 |
PURPOSE:To enable to manufacture a metal wiring pattern in a high-quality state and at a high yield rate by a method wherein an alterative layer, which is formed on the surface of the metal film, or contaminants, which are adhered on the surface, is/are effectively removed with dilute sulfuric acid water solution. CONSTITUTION:Firstly, the aluminum film is coated on the semiconductor substrate, and after that, the following proceeds to a patterning process, yet the aluminum film is often held in a state being exposed in the air and so forth for several hours - scores of hours. During the period of time being held in this state, sometimes the aluminum film is made its surface alter or is made an organic coated film adhere on its surface due to contamination. By exposing the surface of this aluminum film in dilute sulfuric acid, a removal of foreign substances is performed without encroaching on the aluminum film. This is, a dipping of one minute or thereabouts is performed in sulfuric acid water solution diluted to a degree of 10% or thereabouts, for example. Moreover, the following two processes of a process, wherein a photo resist is coated on the metal film, an exposure and developing is performed and a patterning is performed using the photo resist as a mask, and a process, wherein an etching is selectively performed on the metal film using the photo resist as a masking material, are performed. |
