| 摘要 |
PURPOSE:To provide the title device with withstand voltage of 1,500V and leak current of 10muA by a method wherein a silicon diode is coated with glass containing ZnO, SiO, B2O3 with thermal expansion coefficient around 45X14<-7>/ deg.C, 3mum thick. CONSTITUTION:Both ends of a semiconductor chip 1 is passivated with glass 9 (ZnO 15%, Al2O3 3%, B2O3 55%, PbO 10%, SiO2 17% (each weight %) 2mum thick with thermal expansion coefficient of alpha=45X10<-7>/C). The glass fine powder is suspended in isopropyl alcohol to form glass coating solution by electrophoresis and then solidified at 750 deg.C to be annealed at deformation point of 630 deg.C. This device may be provided with withstand voltage of 1,400V and leak current of 10muA. |
