| 摘要 |
PURPOSE:To increase the strength against breakdown due to a surge power by using plural diode twins connected in parallel as a gate protective diode. CONSTITUTION:A plurality of minute diode twins 2 are connected in parallel to compose a large protective diode twin equivalently. And a resistor region 10 consisting of a material except single crystal silicon is formed between a metallic electrode and an anode region of either of each minute diode twin thereby inserting a resistor in the respective minute diode twin in series. When among the minute diodes 2 in the parallel connected body 200, one of them is broken down early (by a lower voltage) by some cause, a breakdown current flows in a resistor inserted in that twin and the voltage applied to that minute diode twin decreases with corresponding to a quantity of the decrease of voltage by the resistor. As a result, all of the minute diode twins are broken down. |
