| 摘要 |
PURPOSE:To form a film of a target material at a uniform thickness on a substrate by positioning the target and substrate to face each other in parallel, deflecting the ions from ion guns by magnetic fields, etc., and irradiating the ions on the target in the stage of forming the target material film on the surface of the substrate by using the ion gun. CONSTITUTION:Six ion guns 111-116 are annularly disposed at 30 deg. angular intervals and electromagnets 121-126 are disposed therebetween. The target 13 consisting of, for example, an Al-Si alloy is disposed above the same and a wafer 15 as the substrate imposed on a supporting member 14 is installed below the same to face the target 13 in parallel therewith. The Ar ions generated from the guns 111-116 are deflected 90 deg. by the magnetic fields generated by the electromagnets 121-126 and are irradiated on the surface of the target 13. The Ar ions are irradiated on the target 13 by changing the deflecting angle with time. The Al-Si alloy particles 16 released from the target 13 form a film 17 having a uniform thickness on the substrate 15.
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