发明名称 MANUFACTURE OF HYDROGENATED AMORPHOUS SEMICONDUCTOR THIN FILM
摘要 PURPOSE:To arbitrary control the distribution of film thickness in the radial direction of an electrode as well as to reduce the irregurality of film thickness by a method wherein a coil is connected to a power electrode, and a DC power source is connected to a substrate electrode. CONSTITUTION:A DC power source 8 is connected to a substrate electrode 1, a coil 10 is connected to a power electrode 2, a DC voltage is applied while a high frequency electricity is being discharged, and a DC circuit consisting of a DC power source 8, a substrate electrode 1, a power electrode 2 and a coil 10 is formed. As a result, when negative bias voltage is applied, the film thickness in the vicinity of the center part is reduced and the film thickness on the circumference is increased because the plasma moves away from the substrate electrode by having a recess in the center part, and on the contrary, when a positive bias voltage is applied, the film thickness is increased in the vicinity of the center part, and the film thickness on the circumference is decreased. Also, if no voltage is applied, a uniform film thickness is obtained on the whole surface. This is because the plasma is stabilized by connecting a coil and that it is transformed and moved by applying bias voltage.
申请公布号 JPS61119029(A) 申请公布日期 1986.06.06
申请号 JP19840241091 申请日期 1984.11.14
申请人 NIPPON SOKEN INC;NIPPON DENSO CO LTD 发明人 NAKANISHI TOMOHIKO;HATTORI TADASHI;MIZUKI SHINYA;MAEKAWA KENJI;KATO TETSUYA
分类号 H01L31/04;H01L21/205 主分类号 H01L31/04
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