发明名称 MANUFACTURE OF MULTILAYER INTERCONNECTION SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a wiring disconnection and a failure of interwiring connection from generating by a method wherein the pad connecting parts, which are very effective for forming the multilayer interconnection into a high-density state, are respectively formed in an insular form, whose circumference is surrounded with the flat and good quality interlayer insulating films, and the contact surface of the lower wiring layer with the upper wiring layer is very flattened. CONSTITUTION:Plural pieces of first-layer wiring conductor layers 3a, 3b... are formed on the insulating protective film 2 of a substrate 1, then interconductor film insulating films 5 are formed in a state intact leaving photo resists 4a, 4b.... Then, the first-layer wiring conductor layers 3a, 3b... are filled the respective valley regions between them with the insulating films 5 by a lift-off process, the surfaces thereof are flattened, then a metal substance layer 6 is formed thereon. A mask patterning is performed on the metal substance layer 6 along with a transition metal layer 7 through photo resists 8a, 8b... and connection parts 6a and 7a or 6b, 7b... are formed. Interlayer insulating films 9 are formed in a state intact leaving all the photo resist masks. A lift-off process is again performed to obtain the flat surface including the insular pad connecting parts 6a and 7a or 6b and 7b, whose circumferences are surrounded with the flat interlayer insulating films 9.
申请公布号 JPS61119064(A) 申请公布日期 1986.06.06
申请号 JP19840241020 申请日期 1984.11.15
申请人 NEC CORP 发明人 HAMANO KUNIYUKI
分类号 H01L21/3205;(IPC1-7):H01L21/88 主分类号 H01L21/3205
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