| 摘要 |
1,135,632. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 14 Feb., 1966 [17 Feb., 1965], No. 6385/66. Heading H1K. In an insulated gate field effect transistor, the gate insulating layer has linearly increasing thickness in the source-drain (or drain-source) direction. This enables a constant field intensity to be obtained under the gate electrode in spite of the potential drop (due to source-drain voltage) in the conducting channel. Fig. 1 shows a semi-conductor layer 4 on sourcedrain ohmic electrodes 3, 2 on a glass substrate 1. Gate electrode 6 overlies insulating layer 5 which increases in thickness from 1500Š to 13000Š. The semi-conductor material may consist of intrinsic or extrinsic material such as cadmium sulphide, cadmium selenide, zinc telluride, tin oxide, indium oxide, gallium arsenide or tellurium; the electrodes of gold and the insulating layer of silica or magnesium fluoride. The electrodes may be applied to regions defined by PN junctions. The increasing thickness of insulator may be obtained by deposition through a mask with a slide which is slowly withdrawn. |
