| 摘要 |
PURPOSE:To obtain the titled compensation having a high sensitivity and an excellent heat-resistance property suitable for producing IC, LSI etc. by incorporating naphthoquinone-1,2-diazidosulfonic acid ester of polyhydroxybenzophenone to an alkaline soluble resin. CONSTITUTION:The titled composition is prepared by dissolving a photosensitive component of a compd. shown by the formula wherein D is naphthoquinone-1,2- diazido-5-sulfonyl or naphthoquinone-1,2-diazido-4-sulfonyl group, and the alkaline soluble resin such as a novolak resin to a suitable org. solvent. The obtd. composition is coated on a silicone wafer and dried to form a resist film. The very fine pattern is obtd. by exposing a pattern on the obtd. resist by an ultra-high voltage mercury lamp followed by washing the obtd. resist with an alkaline aqueous solution of (CH3)4NOH. The titled composition has a long storage life in addition to the prescribed characteristics.
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