| 摘要 |
PURPOSE:To enable to be hardly subjected to the effect of noise to generate in the interior and the exterior of the semiconductor integrated circuit by a method wherein the whole surface of the circuit is covered with a conductive film, which is formed on the conductive wiring layers through an insulating film and has a ground potential. CONSTITUTION:When noise current to generate at a part in the semiconductor integrated circuit runs in a wiring layer 5 having a ground potential, it follows that noise voltage to appear in the other part of the circuit is also very small in this structure, wherein the whole surface of the circuit has a conductive film 7 having a ground potential, as the area of the conductive film 7 is large and its resistivity as very small. Accordingly, by this structure, wherein the whole surface on the semiconductor integrated circuit is converted into the conductive film 7, there exists an effect that the other part on the circuit is not almost affected by noise to generate in the interior of the circuit. Moreover, as there exists the conductive film 7, which has the very small resistivity and has a ground potential, between the conductive wiring layers 4 for signal in the semiconductor integrated circuit and the external noise source against the capacity combinative noise from the exterior in this structure, the degree of coupling according to the stray capacity between the conductive wiring layers 4 for signal and the external noise source becomes very smaller. As a result, the so-called shielding effect to the external noise source is also large. |
