| 摘要 |
PURPOSE:To secure an electrical connection between the substance of the lower parts of the contact holes and the metal wiring by a method wherein the contact holes are formed in the insulating film, a metal film, whereon an amalgam is easy to be formed, is formed on the whole surface of the insulating film, mercury is made to intrude into the discontinuous parts of the metal layer, which are located on the lower parts of the contact holes, and the amalgam is formed on the discontinuous parts of the metal layer. CONSTITUTION:A field insulating film 22, a diffusion layer 23, wherein an N type impurity is introduced, and a polycrystalline silicon wiring layer 24 are formed on a P type semiconductor substrate 21. After that, an insulating film 35 is formed on the whole surface and contact holes 36 are formed by performing an etching using a photo resist as a mask. After that, a metal film 37 of a metal such as copper is formed on the whole surface. Mercury is brought into contact to the discontinuous parts of the metal layer, which are located on the lower parts of the contact holes, and when an amalgam is formed on the discontinuous parts, the discontinuous parts of the metal layer are respectively formed into a continuous state. |
