| 摘要 |
PURPOSE:To obtain a large reading signal without enlarging the capacity of a cell by setting the reference potential lower than the threshold value of an FET for writing/reading. CONSTITUTION:The reference potential Vs is set lower than the threshold voltage of FET-Q. When reading information, a bit line B is charged to high potential VDD, and a word line W1 is set to high potential, and a memory cell MC1 is selected. If the MC1 stores '1', a contact N1 is VDD, and distribution of charge between the line B is not made and accordingly, Q remains non- conductive. If the MC1 stores 'O', the contact N1 is in grounding potential, and charging is made from the line B, and the potential of the contact N1 rises. At this time, the potential of a contact Nr is also raised by the capacity Cs and Q becomes conductive. Accordingly, by adjusting time constant of Cs-R, a large output can be obtained easily.
|
