发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To limit a through-current by providing a transistor (TR) between the base of the 3rd TR connected between the base and the emitter of the 1st TR and the 2nd potential point. CONSTITUTION:When a through-current flows to the 2nd potential point 2 from the 1st potential point 1 via the 1st and 2nd TRs 6, 8, a base-emitter voltage of the TR 8 is increased as the through-current increases. Then the base-emitter voltage of the 7th TR 17 is increased. When the base-emitter voltage of the TR 7 is increased, a collector current of the TR 17 is increased to decrease the base current from a constant current source 14 to the 3rd TR 9.
申请公布号 JPS61118020(A) 申请公布日期 1986.06.05
申请号 JP19840240166 申请日期 1984.11.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUYAMA SEIICHIRO
分类号 H03K19/088;H03K17/60;H03K19/00 主分类号 H03K19/088
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