| 摘要 |
PURPOSE:To obtain the thin film amorphous Si transistor of high current amplification factor by a method wherein a plurality of transistors formed out of a laminated film on the substrate and a plurality of island laminated films are successively connected in a Darlington manner. CONSTITUTION:An ohmic metal 2 such as aluminum is evaporated on the glass substrate 1, and an N<+> a-Si film 3 and an I-a-Si film 4 are successively formed thereon. Schottky metals such as Pt, Au, etc. are evaporated on this common laminated film and patterned in island form, resulting in the formation of two Schottky electrodes 5, 15. Further, I-a-Si films 6, 16 and N<+> a-Si films 7, 17 are successively formed and patterned into islands. Between these island laminated films, the N<+> a-Si film 7 of the first island laminated film is connected to the Schottky electrode 15 of the second island laminated film with the ohmic metal 9 via an insulation layer 8 of oxide Si or the like, resulting in the completion of a thin film transistor. |
