| 摘要 |
PURPOSE:To enable the formation of scratchless films on semiconductor wafer surfaces by a method wherein the susceptor of a P-CVD apparatus is provided with a two-step recess, and a wafer is fixed by the upper recess and the recess shoulder. CONSTITUTION:A vacuum chamber 1 contains the upper electrode 2 and the lower electrode 3, so that a P-CVD film can be formed by impressing voltage on introduction of reaction gas from the upper electrode. The top of the susceptor 3 is provided with a two-step recess. Its upper step 8 is shaped so as to fix the wafer and is smaller in depth than the thickness of the wafer. The lower step 9 is smaller than the upper step 8, and the shoulder is formed between the upper step 8 and the lower step 9. Films are formed by fixing the wafer through fitting to the upper step 8 with the film-forming surface turned upward. This apparatus allows no deposits on the recess shoulder because it is always covered with the wafer. |
