| 摘要 |
PURPOSE:To prevent the generation of residue due to ion impact at the time of pattern formation with double-structural resist by using a plastic plate as the target in etching the lower resin layer with oxygen plasma. CONSTITUTION:After the silicone series resist at the upper layer part is patterned with ionized radioactive rays and developed into a pattern, a pattern of high aspect ratio is formed by transcribing the upper layer pattern to the lower resin layer by oxygen plasma etching. At this time, a plastic plate is used as the target in the oxygen plasma etching of the lower layer resin. This blocks the generation of lower resin layer etching residue. The reason why the generation of residue can be prevented is that a large amount of decomposition products generated by etching the target material with oxygen plasma are adsorbed to the sample surface or present in the neighborhood of the surface and generate the active oxygen radical by redissociation on oxygen ion impact. |
