发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To limit a collector current of a composite transistor (TR) to a prescribed value by providing an equivalent Zener diode comprising a Zener diode and an auxiliary TR between a base and a source of a composite TR in which a bipolar TR and an FET are connected in cascode. CONSTITUTION:Since a base current IB of a main TRQ1 is decreased, the increase in a collector current IC is suppressed. Since the collector current IC having a large value is commutated to a base current supply circuit in the process that composite TRsQ1, Q2 are turned off, a collector-emitter voltage VCE3 of the auxiliary TRQ3 is increased more rapidly than the case when a Zener diode ZD2 is conducted and a Zener current IZ is added to a base current IB3 of the auxiliary TRQ3. Thus, the collector-emitter voltage is kept nearly to a constant value, most collector current IC to be commutated becomes a collector current IC3, which flows to the auxiliary TRQ3 to attain high speed turn-off.
申请公布号 JPS61117920(A) 申请公布日期 1986.06.05
申请号 JP19840238900 申请日期 1984.11.13
申请人 FUJI ELECTRIC CO LTD 发明人 SHIGEKANE TOSHIO
分类号 H03K17/04;H03K17/567;H03K17/60 主分类号 H03K17/04
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