Process for fabricating semiconductor integrated circuit devices.

摘要

After contact holes (23, 22) for the P- and N-type source or drain regions (12, 8) of P- and N-channel MOSFETs (6, 5) have been made at a common step, an N-type impurity a ion-implanted into at least the N-type source or drain regions (12) through the contact holes (22). The N-type impurity is annealed to form an N-type region (9) which is deeper than the N-type source or drain regions (12). During the annealing treatment, the N-type source or drain regions (12) are covered with an insulating film.