| 摘要 |
PURPOSE:To prevent an a-Si pattern by etching an amorphous a-Si film in the state protected on an upper electrode. CONSTITUTION:A lower electrode 2 is formed on a glass substrate 1, an a-Si film 3 is formed thereon, and an upper electrode 8 is further deposited thereon. Then, a photoresist is coated, patterned to allow a resist film 4 to remain. The electrode 8 is chemically etched, the film 3 is plasma etched, and the film 4 is separate. Then, an SiO2 film 5 is formed on the electrode 8, and a photoresist film 6 having a contacting hole 7 is provided thereon. Subsequently, the layer 5 of the portion of the hole 7 is removed by etching, the film 6 is separated, and deposited by lead wirings 9 on the electrode. Thus, since the film 3 is coated with the electrode 8 and then etched, the film 3 is not damaged. |
