Method and structure for disabling and replacing defective memory in a prom device.

摘要

Means are provided for replacing a defective row (or column) of memory in a fuse-array PROM which comprises disabling the defective row and programming a redundant row to respond to the address of the defective row. Means are also provided for reducing the swing between high and low address voltages. The redundant row is connected via an AND gate through fuses to all ADDRESS and &upbar& AS/ lines of the address buffer, so that the redundant row is always off until programmed. If a defective row is found, all memory cells in the defective row are disabled and the redundant row is programmed by selectively blowing fuses leading to the ADDRESS and &upbar& AS/ lines thus causing the redundant row to respond to the address of the defective row.