发明名称 MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE:To avoid the damage of a semiconductor light emitting element by cutting a laser diode of bar state from a wafer formed in two-dimensions with many light emitting elements, cleaving the bar, matching the cleaved surfaces, aligning in one row, placing them on the submount group of the same number, retaining by a needle, securing one by one and separating them. CONSTITUTION:Many submount group 2b in which the outer diameter side and the number of the laser diodes separated on a heater 4 are arrayed closely by matching the contacting surfaces 7. Many semiconductor light emitting elements formed in two-dimensions from a wafer are cut as laser diodes 1b of bar state, individually cleaved, the produced chips are contacted at the separating surfaces 6, and the diodes 1b are placed on the group 2b in this state. Then, they are secured by solder interposed between the diodes 1b and the mount group 2b while sequentially retaining the chips by a needle 5, and separated along the separating surfaces.
申请公布号 JPS61116897(A) 申请公布日期 1986.06.04
申请号 JP19840240173 申请日期 1984.11.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISSHIKI KUNIHIKO
分类号 H01L21/52;H01L21/58;H01L33/02;H01L33/62;H01S5/00 主分类号 H01L21/52
代理机构 代理人
主权项
地址