| 摘要 |
PURPOSE:To improve the uniformity of the thickness of CVD films and to make uniform the properties of the CVD film on a wafer by combining a transparent quartz member, heating means, gas introducing means and discharge port as well as rotating mechanism so as to have a specific effect. CONSTITUTION:A reactive gas 13 is introduced widely through plural gas introducing nozzles 13 into a reaction furnace 11 so as to be introduced unformly from above and is blown to the wafer 20 so as to have the uniform concn. of the reactive gas over the entire region of the wafer in a CVD system of a tunnel type. The inside of a quartz tube 10 is uniformly heated by a heater 15 enclosed on the outside thereof. The wafer 20 is put into a wafer carrier 21 and is moved at a specified speed by a moving mechanism in the furnace 11 in the long axis direction. The reactive gas 13 introduced into the furnace 11 is discharged through each discharge pipe 14 at the bottom after the reaction. Then the difference in conditions is virtually eliminated in the relative relation between the reactive gas 13 and each wafer 20 and only the uniformity of the thickness of the CVD film in the single wafer and the uniformity of the physical and chemical properties of the formed film are consequently required to be taken into consideration. |
