发明名称 MANUFACTURE OF INSULATING THIN FILM
摘要 PURPOSE:To form a plasma anodizing film or a nitride film on a plurality of samples at the same time without increasing the temperature of the samples to the high temperature by effecting a plasma excitation with arranging the divided high-frequency coils in one tube reactor. CONSTITUTION:The bar conductors 1 and 8 which apply DC voltage to samples which will become electrodes are covered with a crystal tube 14. Fixing jigs 12 and 13 are embedded in a window 15 as the position for arranging the samples thereby fixing the samples and determining them to be anodes or cathodes. A surface of the sample 5 which will become an anode is directed to a cathode side and the samples 5 in the positions except the ends are attached while two each of them are combined. The positions of those are in a half of the distance 2a between the centers of the high-frequency coils 3 which are multi-divided. The jig 13 is an insulator and the jig 12 is a conductor. The samples 5 are shorted with only an anode conductor 1 and the samples 4 are shorted with only a cathode conductor 8. O2 is led into a tube reactor 2 and a high frequency is flown in the coils 3 to apply an electric field between the anode and cathode. Then the rise of temperature is not in excess of 600 deg.C because the samples are placed in the region except a plasma region and an oxide thin film can be formed on a plurality of samples 5 simultaneously.
申请公布号 JPS61116843(A) 申请公布日期 1986.06.04
申请号 JP19840239092 申请日期 1984.11.13
申请人 SHARP CORP 发明人 ONIOI KAZUMASA;KUDO ATSUSHI;KOBA MASAYOSHI
分类号 H01L21/31;H01L21/318 主分类号 H01L21/31
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