| 摘要 |
PURPOSE:To realize uniform heating of substrate as a whole and prevent generation of distortion or warpage of substrate by irradiating and heating a semiconductor substrate and non-single crystal semiconductor layer with the light having a particular energy from the surface. CONSTITUTION:An SiO2 layer is formed on a single crystal Si substrate 1 and moreover a polycrystalline Si layer 3 is formed on the layer 2. In order to anneal the layer 3, the predetermined annealing portion at the surface of layer 3 is concentrated or irradiated with the light emitted from the Xenon lamp 4, for example. Simultaneously, the substrate 1 is heated by the light 16 irradiated from the tungsten lamp 15 at the lower side of substrate 1 through a light diffusion plate 17. The Xenon lamp light is almost visible and therefore it is absorbed efficiently by the layer 3, contributing to local fusing and recrystallization at the layer 3. Meanwhile, the light 16 has the light spectrum peak at the near infrared region, therefore transmits into the deep area of substrate 1, it is then absorbed by the entire part of thickness and total heating can be realized. |
