发明名称 METHOD OF FORMING CONTACTING HOLE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form a contacting hole at an accurate position by using a laser beam regulated at the position in the prescribed emitting direction by a beam positioner. CONSTITUTION:A wafer 27 secured onto a stage 25 is regulated at an angle position, and X-Y coordinates of the galvanometer of a beam position 24 and X-Y coordinates of the wafer 27 are accurately matched. Then, the stage 25 is accurately moved so that the center of the chip of the wafer 27 is disposed directly under a laser beam 26. A mark to become the reference origin of X-Y coordinates is formed on the chips of the wafer 27, and the mark is detected to accurately bring the reference point of X-Y coordinates of a galvanometer accurately into coincidence. Then, the beam 26 is emitted to desired position in the coordinates. Thus, a contacting hole can be precisely formed at an accurate position.
申请公布号 JPS61116863(A) 申请公布日期 1986.06.04
申请号 JP19840240177 申请日期 1984.11.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI HIROSHI
分类号 H01L21/3213;(IPC1-7):H01L21/88 主分类号 H01L21/3213
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