发明名称 |
Semiconductor devices consisting of epitaxial material. |
摘要 |
<p>A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is a field effect transistor in which case the Dirac-delta doped layer 13 extends between the source and drain zones (18, 19) respectively. The field effect transistor can be constructed either with a homogeneous structure or with a hetero structure or with a superlattice structure. The field effect transistors described herein have a high transconductance and are capable of operating at high current densities.</p> |
申请公布号 |
EP0183146(A2) |
申请公布日期 |
1986.06.04 |
申请号 |
EP19850114551 |
申请日期 |
1985.11.15 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
SCHUBERT, E.;PLOOG, KLAUS;FISCHER, A.;HORIKOSHI, YOSHIJI |
分类号 |
H01L29/812;H01L21/205;H01L21/331;H01L21/338;H01L29/15;H01L29/36;H01L29/73;H01L29/737;H01L29/772;H01L29/778;H01L29/80;H01L29/861;H01L29/864;H01L31/0352;H01L31/10;H01L31/101;H01L33/06;H01S5/00;H01S5/30;H01S5/34;(IPC1-7):H01L29/205;H01L29/86;H01L29/90;H01L29/72 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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