| 摘要 |
PURPOSE:To obtain a semiconductor laser of long life with less deterioration in the laser having a lower InP clad layer, a GaInAsP active layer, an upper InP clad layer on an InP substrate by forming the first and second distortion absorbing layer of GaInAsP having larger band gap than the active layer on the downside of the lower side clad layer and the upside of the upside clad layer. CONSTITUTION:A P type InP layer 2, an N type InP block layer 3, a P type InP layer 4 are laminated and epitaxially grown on a P type InP substrate 1, and a V-shaped groove 5 of sectional shape intruded from the center of the surface of the layer 4 to the layer 2 is opened. Then, an N type GaInAsP distortion absorbing layer 11 having larger band gap than a P type GaInAsP active layer 7 formed later, a P type InP lower clad layer 6, an active layer 7, and an N type InP upper clad layer 8 are laminated and grown while insulating between the surface of the remaining layer 4 and the bottom of the groove 5, and similar distortion absorbing layer 12 is accumulated while burying the excess recess of the groove 5 thereon.
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