| 摘要 |
PURPOSE:To obtain a barrier electrode with good yield by forming an insulating film having a hole corresponding to a Schottky barrier electrode region on the surface of a semiconductor operation layer, coating a Schottky barrier metal layer while insulating between the hole and the surface of the insulating film, allowing in the hole to remain and removing the metal layer on the surface of the film. CONSTITUTION:A GaAs operation layer 2 is formed on a semi-insulating GaAs substrate 1, an insulating film 3 made of SiO2 is coated, and the first mask 4 of photoresist having a hole corresponding to a gate region is formed thereon. Then, anisotropic dry etching is executed to remove the film 3 exposed in the hole, the mask 4 is removed, and a Schottky barrier metal layer 5 of aluminum is coated on the overall surface while insulating between the portion that the film 3 is removed and the surface of the remaining film 3. Then, the layer 5 coated in the hole is coated by the second mask 6 and etched to remove the layer 5 on the film 3 surrounding it, and only a Schottky barrier electrode 51 made of the layer 5 is allowed to remain at the center on the surface of the layer 2. |
