发明名称 FORMATION OF FLUORIDE FILM
摘要 PURPOSE:To form a hard fluoride film having excellent adhesiveness at a low temp. while absorption is decreased by depositing a fluoride by evaporation to a surface for vapor deposition while irradiating an ion beam thereon in a vacuum atmosphere where the gaseous molecules of a fluorine compd. exists. CONSTITUTION:The inside of a vacuum vessel 11 is evacuated to a high vacuum by an evacuating system 21. An argon ion beam is then irradiated from an ion gun 17 on a substrate 12 to clean the substrate surface and thereafter the gaseous fluorine compd. is introduced through a gas introducing valve 19 into the vessel 11 to maintain the gaseous fluorine compd. atmosphere therein. The fluoride as the vapor deposition material is then deposited by evaporation from an evaporating source 13 to the substrate 12 and at the same time the ion beam is irradiated from the gun 17. The inert gas such as argon is supplied from the gun 17 and the irradiation of the gaseous ion of the substrate is made, for example, about 20-100muA/cm<2>. The generation of the absorption is thus decreased and the fluoride film which is hand and has the excellent adhesiveness is formed.
申请公布号 JPS61117503(A) 申请公布日期 1986.06.04
申请号 JP19840238524 申请日期 1984.11.14
申请人 SHINKU KIKAI KOGYO KK 发明人 MORITA SHINSAKU;MATSUMOTO SHIGEJI;ODAGIRI AKIRA
分类号 C23C14/06;C23C14/00;C23C14/22;G02B1/10;G02B1/12 主分类号 C23C14/06
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