| 摘要 |
PURPOSE:To obtain high integration by coating a conductive film on an insulating substrate, opening the first groove, accumulating a nonsingle crystal semiconductor having a P-N junction on the overall surface including the groove, opening the second groove to epoxy electrode, coating an oxide conductive film, opening the third groove, and specifying the groove opening conditions when connecting the exposed electrode with the previous electrode. CONSTITUTION:A conductive film such as ITO is coated on a transparent substrate made of chemically strengthened glass, and a YAG laser light having 50Xm of spot diameter and 1W of output is emitted at a speed of 3m/min to open the first grooves 1, 1'. Then, a nonsingle crystal semiconductor having a P-N junction or a P-I-N junction is accumulated while burying them, displaced from the first groove, a laser light of 70mum of spot diameter and 0.8W of output is emitted to open the second groove 2. Thereafter, a Cr film is coated through a conductive film such as ITO on the overall surface, the first and second grooves are connected, a laser light of 0.5W of mean output and 30cm/min of scanning speed is emitted to open the third grooves 3, 3' to connect the semiconductor to the Cr film. |
