| 摘要 |
PURPOSE:To improve the inspecting accuracy of photomasks, by arranging under dispersed conditions small patterns for marking which are smaller than the resolution of an exposure device inside a chip pattern arraying area in accordance with a prescribed standard. CONSTITUTION:Small patterns 2a and 2b for marking which are smaller than the resolution of an exposure device are arranged under dispersed conditions inside the element chip forming pattern 1 arraying area of a photomask in accordance with a prescribed standard which means, for example, patterns 2a for marking indicating lines and patterns 2b for marking indicating rows. When such an arrangement is used, locations of special patterns, such as the one used as the starting point of the photomask inspection and the one discriminated as faulty as a result of inspection, can be specified out of the numerous chip patterns arrayed in the photomask. Therefore, the inspecting accuracy of the photomask can be improved and, if circumstances require, correction of a faulty pattern becomes easy. |
