| 摘要 |
1,076,440. Semi-conductor devices. MOTOROLA Inc. June 16, 1966 [June 28, 1965 (2)]. No. 26999/66. Heading H1K. A common substrate 11 supports a plurality of semi-conductor devices 13, 14, 15, 16 formed in discrete monocrystalline semi-conductor islands which are isolated from each other and from the substrate 11 by a continuous layer 12 of glass. The glass is intimately bonded both to the semi-conductor islands and to the substrate, and all three have similar thermal expansion characteristics. The semi-conductor devices are connected into a circuit by means of metallic conductors 22, 23, 24, 25, 26 passing over an oxide layer 21. In manufacture, channels are etched in one face of a monocrystalline semi-conductor wafer, a layer of glass is formed on the etched face, the substrate 11 (which may be of the same semi-conductor material) is bonded to the glass-coated face of the wafer, and the opposite face of the wafer is removed to a depth sufficient to expose portions of the glass layer, leaving islands of semiconductor material surrounded by glass. The formation of the glass layer may involve the application of finely-divided glass in a volatile diluent to both the wafer and the substrate, or the application to the wafer of a material which forms a glass on oxidation and to the substrate of a metal capable of being oxidized to a glass. A film of silicon dioxide may be formed first on both the wafer and the substrate. Other circuit components may be deposited on the surface of the glass between the semiconductor devices. |
