FORMATION OF MULTILAYER INTERCONNECTION

摘要

PURPOSE:To reduce disconnection of wiring by eliminating a difference in level produced when the second layer wiring is formed on the first layer wiring so as to make the substrate flat. CONSTITUTION:The first layer wiring 2 is formed on a semiconductor substrate 1 and an insulating film 3 of almost the same thickness as the wiring 2 is deposited on the whole surface. In a recess of the film 3, a resist pattern 4 is formed in a manner a thickness of it becomes the same as a projecting part of the film 3. The resist of the same quality is spread over the whole surface and the surface of a resist film 7 is levelled. Then the film 7 and the film 3 are etched at the same velocity. Consequently, the projecting part of the film 3 is eliminated and the substrate can be levelled regardless of a size of the level difference due to a base wiring. Subsequently, an interlaminar insulating film 8 is formed and contact holes 6 are opened in the predetermined positions thereby forming the second layer wiring 5 on the film 8. By such constitution, there is no possibility of disconnection of wiring and it becomes possible to improvement in reliability and integration.