| 摘要 |
PURPOSE:To prevent the shortcircuit in a wide semiconductor layer region of a semiconductor device by not forming an electrode at the relatively wide part of the region of a semiconductor layer at the bottom of a mesa type valley part and forming an insulator layer on the semiconductor layer. CONSTITUTION:A p type diffused layer is used as an anode 21, an n type diffused layer is formed thereon to form a base 22, and a p type diffused layer is formed to construct a gate 23. An n<+> type diffused layer is formed on the gate 23, and a cathode 24 is formed by mesa etching. An oxidized film 25 is formed on the mesa surface, and then the film 25 of the parts forming a cathode electrode corresponding to the top of the mesa structure and forming a gate electrode corresponding to the bottom of the mesa structure valley part are selectively etched. Then, cathode electrode 28 and gate electrode 27 are formed, an insulator layer 29 is then formed, and the part on the cathode electrode is selectively etched. |
