| 摘要 |
PURPOSE:To enable high-speed etching by laminating on a transparent glass substrate a polysilicon layer, a metallic film etchable by the dry etching method same as said layer, and another polysilicon layer. CONSTITUTION:The polysilicon layer 3 of 5-10nm thickness is formed on the transparent glass substrate 1 of quartz glass or the like by the sputtering or CVD method, on this layer 3 the 60-80nm thick metallic film 4 made of Mo, W, or the like is formed by the sputtering method or the like, and further on this film 4 the 10-20nm thick polysilicon layer 5 is formed to obtain a photomask material. As the material of the film 4, whatever metal can be etched by the etching method same as that of the polysilicon layer 3 may be used, and it can be embodied by Mo, W, Ti, etc. |
