发明名称 |
Method of inhibiting corrosion after aluminum etching |
摘要 |
A novel process for treating IC wafers or chips so as to inhibit corrosion after aluminum etching. The process involves passivating the wafers or chips by displacing reactive gaseous species adsorbed on the wafers or chips with a gaseous species that is substantially inert and hence will not corrode aluminum layers on the IC wafers or chips.
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申请公布号 |
US4592800(A) |
申请公布日期 |
1986.06.03 |
申请号 |
US19840667901 |
申请日期 |
1984.11.02 |
申请人 |
OERLIKON-BUHRLE U.S.A. INC. |
发明人 |
LANDAU, RICHARD F.;MAJEWSKI, HENRY A. |
分类号 |
H01L21/302;C23F4/00;H01L21/02;H01L21/3065;H01L21/3213;(IPC1-7):C23F1/02;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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