| 摘要 |
A molecular beam epitaxy system wherein the wafer on which epitaxial deposition is to occur is not soldered to a substrate holder. Instead, a substrate holder with a lip approximately as high as the thickness of the wafer is used, and a retaining ring attaches to the substrate holder to hold the wafer in place during the growth cycle. The retaining ring, like the substrate holder, is made of high-purity refractory material, such as arccast molybdenum. The substrate holder and retaining ring are dimensioned to hold the wafer somewhat loosely, to allow for thermal expansion during the cycling up to growth temperature, which is typically about 600 DEG C.
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