| 摘要 |
Oxide (RmOn) films are grown by evaporation from separate sources of element (R) and an oxide (MrOs) which serves as the oxygen source. The oxide (MrOs) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (MrOs) can react with the element (R) to form another oxide (RmOn) that is thermodynamically more stable: mR+MrOs->RmOn+MrOs-n Using this technique, films of Al2O3, MgO, SiO2, and MgAl2O4 have been grown using As2O3 or Sb2O3 as the oxygen source.
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