Method of fabrication of aluminum contacts through a thick insulating layer in an integrated circuit

摘要

In order to form aluminum interconnections through a thick insulating layer in an integrated circuit without any attendant danger of rupture at the level of the contact openings in the insulating layer between the interconnection layer and the substrate, the contact openings are first filled with polycrystalline silicon or a metal having high covering power and deposited by chemical decomposition in gas phase, whereupon the aluminum is deposited by vacuum evaporation.