| 发明名称 |
MOS dynamic memory device |
| 摘要 |
An MOS dynamic memory device is improved in operation by adding a cell plate voltage control circuit to terminals of the word lines and connected to respective cell plates. In operation, the cell plate is recharged after discharged during with a time which a word line remains driven.
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| 申请公布号 |
US4593382(A) |
申请公布日期 |
1986.06.03 |
| 申请号 |
US19820418911 |
申请日期 |
1982.09.16 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
FUJISHIMA, KAZUYASU;SHIMOTORI, KAZUHIRO;OZAKI, HIDEYUKI;NAKANO, TAKAO |
| 分类号 |
H01L29/78;G11C11/404;H01L27/10;(IPC1-7):G11C11/24 |
主分类号 |
H01L29/78 |
| 代理机构 |
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