发明名称 HIGH-FREQUENCY PIEZOELECTRIC RESONATOR AND METHOD OF FABRICATION OF SAID RESONATOR
摘要 <p>HIGH-FREQUENCY PIEZOELECTRIC RESONATOR AND METHOD OF FABRICATION OF SAID RESONATOR The high-frequency piezoelectric resonator comprises a quartz plate or disk having a region of reduced thickness which forms a diaphragm and is joined to the remainder of the plate or disk by means of a zone forming a step. A conductive electrode extends from the exterior of the disk or plate to the center of the thinned region and is provided with a conductive tongue constituted by a metallic film-layer of controlled thickness and disposed in the stepped zone. The method involves formation of the disk or plate by ion machining whereas the electrodes and the conductive tongue are formed by the sputtering technique.</p>
申请公布号 CA1205533(A) 申请公布日期 1986.06.03
申请号 CA19830429180 申请日期 1983.05.30
申请人 COMPAGNIE D'ELECTRONIQUE ET DE PIEZO-ELECTRICITE - C.E.P.E. 发明人 BERTE, MARC;BIDARD, LOUIS;LECHOPIER, SERGE
分类号 H03H9/19;H03H3/02;H03H9/17;H03H9/56;H03H9/58;(IPC1-7):H03H9/17 主分类号 H03H9/19
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