发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To reduce defectives due to electrical short circuits, which have been generated in an assembly process in the conventional method, largely by constituting p-n junction sections exposed to side surfaces except the end surface of a resonator for a semiconductor laser under the state in which the p-n junction sections are indented to the substrate side more than an internal p-n junction section. CONSTITUTION:p-n junction sections in the vicinity of side surfaces except the end surface of a resonator take constitution in which the p-n junction sections are formed recessed to the substrate side more than internal p-n junction sections. A proper protective film for preventing the deterioration of the end surface of the resonator is shaped onto the end surface. When a semiconductor laser is prepared by a cutting such as cleavage according to the constitution, sections made to be contained in the end surface of the resonator in the end sections of p-n junctions exposed in all directions are insulated electrically by the protective film, and the ends of the p-n junctions in side surfaces approximately vertical to these sections made to be contained in the end surface of the resonator are separated from the surface, and formed on the side nearer to a substrate. Consequently, when the laser is bonded by using a solder material while the surface is directed downward, electrical short circuit due to the creeping, etc. of the solder material can be prevented.
申请公布号 JPS61115366(A) 申请公布日期 1986.06.02
申请号 JP19840237300 申请日期 1984.11.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SHIMIZU YUICHI;WADA MASARU;KUME MASAHIRO;ITO KUNIO;YOSHIKAWA NORIYUKI
分类号 H01S5/00 主分类号 H01S5/00
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