| 摘要 |
PURPOSE:To reduce astigmatism, and to form a semiconductor laser having excellent current optical output characteristics having small oscillation threshold currents and linearity and high-output characteristics by shaping structure in which index waveguide structure, which does not depend upon an optical absorption effect, and current constriction structure are incorporated. CONSTITUTION:An n type Al0.4Ga0.6As layer 3 having groove width of approximately three micron is arranged onto a p type Al0.4Ga0.6As layer 2, thus forming structure in which a current path is enabled while being limited only in a groove. The forbidden band width of the n type Al0.4Ga0.6As layer 3 is made larger than that of an n type Al0.11Ga0.89As layer 6 as an active layer, thus resulting no optical absorption effect on laser oscillation beams. Since the refractive index of the n type Al0.4Ga0.6As layer 3 is made smaller than that of the n type Al0.11Ga0.89As layer 6 as the active layer, optical absorption loss is eliminated to the light emission of the n type Al0.11Ga0.89As layer 6 positioned in the groove and index waveguide is enabled, thus avoiding the generation of astigmatism resulting from the delay of a wave surface.
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