发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To conduct self-excited pulse oscillation operation and bistable operation stably at high speed in a semiconductor laser by simple circuit constitution by connecting an electric circuit, in which a signal from a detecting electrode is amplified and applied to an injection electrode, to the semiconductor laser with isolated injection electrode and detecting electrode. CONSTITUTION:Since an operating point for currents injected from an electrode 12 is positioned at a section higher than a threshold, a semiconductor laser starts its oscillation. When the photocurrents of an electrode 11 increase by an oscillation, however, a transistor 21 is conducted, injection currents passing through the electrode 12 reduce, the currents are made lower than the threshold and the oscillation stops, the photocurrents of the electrode 11 minimize, the transistor 21 is turned OFF and injection currents recover to the threshold or higher again, and photocurrents increase again. The operating point of the semiconductor laser is changed in response to optical outputs in said process, thus resulting in stable pulse oscillation operation. A semiconductor laser having differential gain characteristics by an electrode division is utilized as the semiconductor laser, thus simplifying a feedback amplifying circuit.
申请公布号 JPS61115370(A) 申请公布日期 1986.06.02
申请号 JP19840237909 申请日期 1984.11.12
申请人 NEC CORP 发明人 TOMITA AKIHISA
分类号 H01S5/00;H01S5/042;H01S5/06 主分类号 H01S5/00
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