SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To set the circuit threshold voltage of a CMOS circuit freely by forming potential difference among each substrate and source for a first conduction type channel MOS transistor constituting an input section and a second conduction type channel MOS transistor. CONSTITUTION:A p channel MOS transistor 20 and an n channel MOS transistor 212 form an inverter circuit constituting an input section for a CMOS.IC, and a p channels MOS transistor 22 and an n channel MOS transistor 23 represent transistors organizing circuits after an internal circuit. Voltage VGBP and voltage VGBN are each applied in the reverse bias direction among several source and substrate for the p channel MOS transistor 20 and the n channel MOS transistor 21. Only the threshold voltage of the transistor for the input section is changed by a back-gate-bias effect. Accordingly, circuit threshold voltage can be set freely.